Low/Medium Voltage MOSFETs | FDMC86116LZ

Nチャネル PowerTrench® MOSFET、100V、7.5A、103mΩ

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Overview

このNチャネルLogic Level MOSFETは、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPower Trench®プロセスを使用して製造されます。ESD電圧レベルを高めるためにG-Sツェナーを追加しています。

  • コンシューマー
  • 最大RDS(on) = 103 mΩ、VGS = 10 V、ID = 3.3 A
  • 最大RDS(on) = 153 mΩ、VGS = 4.5 V、ID = 2.7 A
  • HBM ESD保護レベル>3 KV通常
  • 100%のUILがテスト済み
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86116LZ

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DR

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Logic

0

Single

0

100

103

±20

2.2

7.5

19

-

153

-

2

232

0.7

23

45

2.4

$0.3485

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