Low/Medium Voltage MOSFETs | FDMC86265P

P チャネル PowerTrench® MOSFET -150V、-2.6A、1.2Ω

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Overview

この P チャネル MOSFET は、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように最適化された高度な Power Trench® プロセスを使用して製造されます。

  • This product is general usage and suitable for many different applications.
  • 最大rDS(on) = 1.2 Ω @ VGS = -10 V、 ID = -1 A
  • 最大 rDS(on) = 1.4 Ω @ VGS = -6 V、 ID = -0.9 A
  • 低Qgに最適化された超低RDS-on中電圧Pチャンネルシリコン技術
  • この製品は、負荷スイッチ用途だけでなく高速スイッチングにも最適化します。
  • 100%のUILがテスト済み
  • RoHS対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMC86265P

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

Power 33 (u8FL)

Low-Medium Voltage

Standard

0

Single

0

-150

1200

±25

-4

-2.6

16

-

-

-

2.8

158

0.7

78

16

0.7

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDMC86265P

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

6716497626

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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