Low/Medium Voltage MOSFETs | FDMC86340ET80

N チャネル・シールドゲート Power Trench® MOSFET 80V、68A、6.5mΩ

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Overview

この N チャネル MOSFET は、シールドゲート技術を組み込んだ高度な PowerTrench® プロセスを使用して製造されています。このプロセスは、オン抵抗向けに最適化され、同様に優れたスイッチング性能を維持します。

  • DC-DC商用パワーサプライ
  • シールドゲートMOSFET技術
  • 最大 rDS(on) = 6.5 mΩ @ VGS = 10 V、ID = 14 A
  • 最大 rDS(on) = 8.5 mΩ @ VGS = 8 V、ID = 12 A
  • 超低 rDS(on)
    の高パフォーマンス技術
  • 終端器は鉛フリーです
  • RoHS準拠
    "

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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FDMC86340ET80

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Die Related Summary Data

Device: FDMC86340ET80

Equivalent to wafer fab process: RM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RM

0

2240712952

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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