Low/Medium Voltage MOSFETs | FDMS3672

N チャネル UltraFET Trench® MOSFET 100V、22A、23mΩ

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Overview

UltraFET デバイスは、電力変換アプリケーションでベンチマーク効率を実現する特性を組み合わせています。これらのデバイスは、rDS(on) 、低 ESR、低トータルおよびミラーゲート電荷に最適化されており、高周波 DC/DC コンバータに最適です。

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  • 最大 RDS(on) = 23mΩ @ VGS = 10V、ID = 7.4A
  • 最大RDS(on)=29mΩ@ VGS=6V、ID= 6.6A
  • 通常Qg=31nC@VGS=10V
  • 少量のミラー電荷
  • 高周波数で最適化された効率
  • RoHS対応

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS3672

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CAD Model

Pb

A

H

P

DFN-8

506DP

1

260

REEL

3000

Yes

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Standard

0

Single

0

100

23

±20

4

22

78

-

-

18

31

2015

8

101

210

90

$1.1388

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Die Related Summary Data

Device: FDMS3672

Equivalent to wafer fab process: 2C

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

2C

0

3942797527

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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