Low/Medium Voltage MOSFETs | FDMS7602S

デュアル N チャネル PowerTrench® MOSFET 30V、30A

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このデバイスには、デュアル MLP パッケージに 2 つの特別な N チャネル MOSFET が含まれています。スイッチ・ノードは内部で接続されており、同期降圧コンバータの配置とルーティングを容易にします。制御 MOSFET (Q1) および同期 SyncFET™Q2) は、最適な電力効率を提供するように設計されています。

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  • Q1: N-Channel
    Max RDS(on) = 7.5 mΩ at VGS = 10 V, ID = 12 A
    Max RDS(on) = 12 mΩ at VGS = 4.5 V, ID = 10 A
  • Q2: N-Channel
    Max RDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A
    Max RDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 14 A
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS7602S

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Active

CAD Model

Pb

A

H

P

DFN-8

506DR

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Dual

0

30

Q1: 7.5, Q2: 5.0

20

3

Q1: 30.0, Q2: 30.0

Q1: 2.2; Q2: 2.5

-

Q1: 12.0, Q2: 6.8

7.9

16

2020

-

-

-

-

$0.5192

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Die Related Summary Data

Device: FDMS7602S

Equivalent to wafer fab process: RM,U4

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等価デバイス時間

MTBF/MTTF (時間)

FITS

RM,U4

0

495535072

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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