Low/Medium Voltage MOSFETs | FDMS8350LET40

N チャネル PowerTrench® MOSFET、40V、300A、0.85mΩ

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Overview

この N チャネル MOSFET は、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度な PowerTrench® プロセスを使用して製造されています。

  • This product is general usage and suitable for many different applications.
  • 最大RDS（オン）= 0.85 mΩ @ VGS = 10 V、 ID = 47 A
  • 最大RDS（オン）= 1.2 mΩ @ VGS = 4.5 V、 ID = 38 A
  • 高度なパッケージとシリコンの組み合わせによる低RDS（オン）、高効率
  • MSL1堅牢なパッケージ設計
  • 100% UILテスト済み
  • RoHS 対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS8350LET40

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

483AG

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

Power 56 (SO-8FL)

Low-Medium Voltage

Logic

0

Single

0

40

0.85

±20

3

300

125

-

1.2

38

73

11850

16

82

3430

4805

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDMS8350LET40

Equivalent to wafer fab process: RN

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN

9

11968865347

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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