Low/Medium Voltage MOSFETs | HUF75545P3

N チャネル UltraFET パワー MOSFET 80V、75A、10mΩ

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N チャネル UltraFET パワー MOSFET 80 V、75 A、10 mΩ

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

HUF75545P3

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Yes

N-Channel

PowerTrench® T1

TO-220

Low-Medium Voltage

Standard

0

Single

0

80

10

±20

4

75

270

-

-

-

105

3750

43

300

1100

350

$1.3856

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信頼性データ

Die Related Summary Data

Device: HUF75545P3

Equivalent to wafer fab process: U2

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

U2

1

4110087345

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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