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コンパクトで効率的なデザインを目的として設計され、高い熱性能を備えた 5x6mm LFPAK デザインの工業用パワー MOSFET。
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製品:
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製品
状態
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
Vgs (V)
Vgs(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
NTMYS3D5N04CTWG
Active
Pb
A
H
P
LFPAK-4
1
260
REEL
3000
Yes
N-Channel
PowerTrench® T6
Power 56 LFPAK
Low-Medium Voltage
Standard
0
Single
0
40
3.3
20
3.5
102
3.6
-
-
-
23
1600
3.5
23
830
28
$0.888
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信頼性データ
Die Related Summary Data
Device: NTMYS3D5N04CTWG
Equivalent to wafer fab process: TRENCH FET
製品技術
製品技術
等価デバイス時間
MTBF/MTTF (時間)
FITS
TRENCH FET
10
28017909861
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)
