Low/Medium Voltage MOSFETs | NVMJS1D4N06CL

パワー MOSFET、 60 V、1.4Ω、220 A、シングル N チャネル

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Overview

コンパクトで効率的なデザインを目的として設計され、高い熱性能を備えた 5x6mm LFPAK デザインの車載用パワー MOSFET。AEC-Q101 認定済みの MOSFET で PPAP に対応しており、ボード・レベルの高い信頼性が求められる車載アプリケーションに適しています。

  • Reverse Battery Protection
  • Switching Power Supplies
  • Power Switches (High Side Driver, Low Side Driver, H-Bridges, etc.)
  • Solenoid Driver - ABS, Fuel Injection
  • Motor Control - EPS, Wipers, Fans, Seats, etc.
  • Load Switch - ECU, Chassis, Body
  • Small Footprint (5 x 6mm)
  • Low RDS (ON)
  • Low QG and Capacitance
  • LFPAK8 Package
  • AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVMJS1D4N06CLTWG

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Die Related Summary Data

Device: NVMJS1D4N06CLTWG

Equivalent to wafer fab process: TRENCH FET

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TRENCH FET

10

28017909861

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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