Small Signal MOSFETs | NDC7001C

デュアルN&Pチャネル拡張モード電界効果トランジスタ 60V

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Overview

これらのデュアルN&Pチャネル拡張モード電界効果トランジスタは、フェアチャイルド独自の高セル密度のDMOS技術を使用して製造されています。この非常に高密度なプロセスで、オン抵抗の最小化を目的として設計されており、頑丈で信頼性の高い性能と高速なスイッチングを実現します。これらのデバイスは、低電圧、低電流、スイッチング、および電源アプリケーションに特に適しています。

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  • Q1: 0.51A、60V
  • Q2: -0.34A、60V
  • 高飽和電流
  • 低RDS(ON)用の高密度セル設計
  • 優れた熱容量および電気容量のために銅リードフレームを使用した独自のSuperSOT™-6パッケージ設計

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDC7001C

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

Complementary

PowerTrench® T1

SC-6

Small Signal

Logic

0

NA

0

±60

N: 2000, P: 5000

±20

2.5

-0.34

0.096

-

N: 4000, P: 7500

-

1.6

20

N: 0.4, P: 0.3

N: 16, P: 11

N: 11, P: 13

N: 16, P: 11

$0.1383

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