Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 33 A, 99 mΩ, TO-247

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Overview

The SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV Charger
  • Solar / UPS
  • Ultra Low Gate Charge (Typ. Qg= 48 nC)
  • Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)
  • Optimized Capacitance
  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 79.2 m Ω
  • 100% Avalanche Tested
  • RoHS Compliant
  • Internal Gate Resistance: 6.9 Ω

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTHL099N60S5

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

F

600

99

N-Channel

Single

4

4

33

184

~NA~

~NA~

~NA~

48

2500

$2.9255

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