Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel

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Overview

Power MOSFET and Schottky Diode, 30V, 5.7A, Single N-Channel with 30V, 2.8A, Schottky Barrier Diode

  • Disk Drives
  • DC-DC Converters
  • Printers
  • FETKY ™ Surface Mount Package Saves Board Space
  • Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility
  • Low RDS(on) MOSFET and Low VF Schottky to MinimizeConduction Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • This is a Pb-Free Device

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製品:

1

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Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMD4884NFR2G

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

30

48

N-Channel

with Schottky Diode

20

2.5

5.7

2.3

-

70

2.8

5.6

280

Price N/A

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