N-Channel Shielded Gate PowerTrench® MOSFET 150V, 95.6A, 7.9mΩ

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Overview

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • Primary mosfet
  • Synchronous Rectifier
  • motor switch
  • Power Supplies
  • Motor Control
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 3.2 mΩ at VGS = 10 V, ID = 67 A
  • Max rDS(on) = 7.9 mΩ at VGS = 6 V, ID = 33 A
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant

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V(BR)DSS Min (V)

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

RDS(on) Max @ VGS = 10 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

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NTMFS7D5N15MC

Active

Pb

A

H

P

PQFN-8

1

260

REEL

3000

N

N-Channel

Single

150

20

4.5

95.6

3.3

~NA~

~NA~

7.9

~NA~

46

3835

$2.1157

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