MOSFETs | NTMTS0D4N04C

シングル N チャネル・パワー MOSFET 40V、558A、0.45mΩ、PQFN 8x8

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Overview

この N チャネル MV MOSFET は、シールドゲート技術を組み込んだオン・セミコンダクターの高度な Power Trench プロセスを使用して製造されています。このプロセスは、オン抵抗を最小限に抑えながら、ベストインクラスのソフトボディ・ダイオードで優れたスイッチング性能を維持するように最適化されています。

  • Motor Control
  • DC-DC Converters
  • Battery Management/Protection
  • Power Steering/ Load Switch
  • Power Tools, E-Scooters, Drones
  • Battery Management/ Protection
  • Necom, Telecom
  • Power Supplies
  • Very Low RDS(on), Shielded Gate Trench Technology
  • Low Profile PQFN 8x8 package
  • Maximum junction temperature of 175C
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NTMTS0D4N04CTXG

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Active

CAD Model

Pb

A

H

P

DFNW-8

507AP

1

260

REEL

3000

Y

40

0.45

N-Channel

Single

20

4

553

244

~NA~

~NA~

~NA~

251

16500

$2.7048

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