NTMTSC1D5N08MC: MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL®80 V, 1.56 mΩ, 287 A

Datasheet: MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL, 80 V, 1.56 mOhms, 287 A
Rev. 1 (240kB)
製品概要
信頼性データを表示する
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製品変更通知
MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL®80 V, 1.56 mΩ, 287 A
特長   利点
     
  • Small Footprint (8x8 mm) for Compact Design
 
  • Optimized Switching performance
  • Low RDS(on) to Minimize Conduction Losses
 
  • Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching
  • Low QG and Capacitance to Minimize Driver Losses
 
  • High efficiency with lower switching spike and EMI
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
 
  • Improved switching FOM particularly Qgd
アプリケーション   最終製品
  • Power Tools, Battery Operated Vacuums
  • UAV/Drones, Material Handling
  • BMS/Storage, Home Automation
  • Synchronous Rectification for ATX / Server / Telecom PSU
 
  • Power Tools, Battery Operated Vacuums
  • UAV/Drones, Material Handling
  • BMS/Storage, Home Automation
  • Synchronous Rectification for ATX / Server / Telecom PSU
技術資料 & デザイン・リソース
データシート (1) パッケージ図 (1)
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NTMTSC1D5N08MC Active
Pb-free
Halide free
NTMTSC1D5N08MC DFNW-8 507AS 1 260 Tape and Reel 3000 $3.2558
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
NTMTSC1D5N08MC  
 $3.2558 
Pb
H
 Active   
N-Channel
Single
80
±20
4
287
250
1.56
101
7420
DFNW-8
Case Outline
507AS   
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