Small Signal MOSFETs | EFC2K101NUZ

デュアルNチャネル・パワーMOSFET 12V、15A、6.2mΩ

Obsolete

Datasheet

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Overview

このパワーMOSFETの特長は、低オン抵抗です。このデバイスはポータブル機器の電源スイッチなどのアプリケーションに適しています。1セル・リチウムイオンバッテリ・アプリケーションに最適です。

  • 1-Cell Lithium-ion Battery Charging and Discharging Switch

  • Portable Machines

  • High Speed Switching
  • Low Gate Charge
  • 2.5 V Drive
  • 2 kV ESD HBM
  • Common-Drain Type
  • ESD Diode-Protected Gate
  • RoHS compliance

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

EFC2K101NUZTDG

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Obsolete

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CAD Model

Pb

A

H

P

WLCSP-6

567VU

NA

0

REEL

5000

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Dual Common Drain

0

12

-

8

1.3

15

1.4

10

6.2

16

-

NA

-

-

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: EFC2K101NUZTDG

Equivalent to wafer fab process: TRENCH FET LEGACY

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TRENCH FET LEGACY

2

15086608915

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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