Small Signal MOSFETs | FDG6308P

デュアル P チャネル 1.8V 仕様 PowerTrench® MOSFET -20 V、-0.6 A、400 mΩ

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Overview

この P チャネル 1.8V 仕様 MOSFET は、低電圧 PowerTrench プロセスを使用しています。バッテリ電源管理アプリケーション向けに最適化されています。

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  • –0.6 A、–20 V
  • RDS(ON)= 0.40Ω @ VGS = –4.5 V
  • RDS(ON) = 0.55Ω @ VGS = –2.5 V
  • RDS(ON) = 0.80Ω @ VGS = –1.8 V
  • 少量のゲート電荷
  • 特に低いRDS(ON)
    用の高性能トレンチ技術
  • コンパクトな業界標準SC70-6表面実装パッケージ

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG6308P

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CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Dual

0

-20

-

8

-1.5

-0.6

0.3

Q1=Q2=550

Q1=Q2=400

0.76

1.8

153

-

-

-

-

Price N/A

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Die Related Summary Data

Device: FDG6308P

Equivalent to wafer fab process: TT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TT

6

2104831460

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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