Small Signal MOSFETs | FDS8880

Nチャネル PowerTrench® MOSFET 30V、11.6A、10mΩ

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Overview

このNチャネルMOSFETは、同期または従来のスイッチングPWMコントローラーを使用して、DC/DCコンバーターの全体的な効率を改善するために特別に設計されています。低ゲート電荷、低RDS（ON）、高速スイッチング速度向けに最適化されています。

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  • RDS(ON) = 10 mΩ @ VGS = 10V @ ID = 11.6A
  • RDS(ON) = 12mΩ @ VGS = 4.5V @ ID = 10.7A
  • 超低rDS(ON)
    用の高性能トレンチ技術
  • 少量のゲート電荷
  • 高い電力および電流処理能力

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8880

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

30

10

20

2.5

11.6

2.5

-

12

5

12

1235

-

-

-

-

$0.2817

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信頼性データ

Die Related Summary Data

Device: FDS8880

Equivalent to wafer fab process: T5

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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