Small Signal MOSFETs | FDY1002PZ

デュアルPチャネル ( -1.5 V) 仕様PowerTrench® MOSFET -20V、-0.83A、0.5Ω

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Overview

このデュアルPチャネルMOSFETは、特別なMicroFETリードフレームでrDS（ON） @ VGS = - 1.5 Vを最適化するために、高度なPower Trench プロセスを使用して設計されています。

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  • Li-Ion Battery Pack

  • 最大 rDS(on) = 0.5 Ω @ VGS = -4.5 V、 ID = –0.83 A
  • 最大RDS(on)=0.7Ω@VGS=–2.5V、ID=–0.70A
  • 最大RDS(on)=1.2Ω@VGS=–1.8V、ID=–0.43A
  • 最大RDS(on)=1.8Ω@VGS=–1.5V、ID=–0.36A
  • HBM ESD保護レベル = 1400V (注3)
  • RoHS対応

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDY1002PZ

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Lifetime

Similar Products
CAD Model

Pb

A

H

P

SOT-563

419BH

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

-20

-

8

-1

-0.83

0.625

700

500

0.8

2.2

100

-

-

-

-

$0.1631

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信頼性データ

Die Related Summary Data

Device: FDY1002PZ

Equivalent to wafer fab process: TV

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TV

0

1399545734

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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