Small Signal MOSFETs | EFC4C002NL

3 セル・リチウムイオン・バッテリ保護用デュアル N チャネル・パワー MOSFET、30 V、30 A、2.6 mΩ

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Overview

この N チャネル・パワー MOSFET はオン・セミコンダクターの Trench 技術を用いて製造し、ゲート電荷の最小化と抵抗の超低減を目的として設計されています。このデバイスはドローンやノートブック PC などのアプリケーションに適しています。

  • 3-Cells Lithium-ion Battery Charging and Discharging Switch

  • Drone
  • Notebook PC

  • Ultra Low On-Resistance
  • Low Gate Charge
  • RoHS compliance
  • High Speed Switching
  • Common-Drain type

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

EFC4C002NLTDG

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CAD Model

Pb

A

H

P

WLCSP-8

567MC

NA

0

REEL

5000

N

N-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Dual Common Drain

0

30

Q1=Q2=2.6

20

2.2

30

2.6

-

Q1=Q2=5.1

21.7

45

6200

-

-

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: EFC4C002NLTDG

Equivalent to wafer fab process: TRENCH FET LEGACY

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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