Small Signal MOSFETs | FDC021N30

Nチャネル PowerTrench® MOSFET、30V、6.1A、26 mΩ

Obsolete

Datasheet

購入

Overview

このNチャネルPowerTrench MOSFETは、優れたスイッチング性能のために低デート電荷を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrench®プロセスを使用して製造されます。

  • This product is general usage and suitable for many different applications.
  • 最大rDS(on) = 26 mΩ ＠ VGS = 10 V、ID = 6.1 A
  • 最大rDS(on) = 33 mΩ ＠ VGS = 4.5 V、ID = 5.3 A
  • 超低rDS (on)
    向けの高性能トレンチ技術
  • 広く使われている表面実装パッケージで提供される高い電力および電流処理機能
  • 高速スイッチング速度
  • RoHS準拠

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC021N30

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Obsolete

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

TSOT-23-6

Small Signal

Logic

0

Single

0

30

26

20

3

6.1

1.6

-

33

6

3.7

510

-

-

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDC021N30

Equivalent to wafer fab process: U4

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

U4

0

2016436571

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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