Small Signal MOSFETs | FDC30N20DZ

デュアル N チャネル PowerTrench® MOSFET、30V、4.6A、31mΩ

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Overview

この N チャネル MOSFET は、高度な PowerTrench® プロセスを用いて製造されています。このプロセスは、rDS(on)、スイッチング性能、堅牢性のために最適化されています。

  • 最大rDS(on) = 31 mΩ ＠ VGS = 10 V、ID = 4.6 A
  • 最大 rDS(on) = 38 mΩ ＠ VGS = 4.5 V、ID = 4.2 A
  • 超低rDS(on)
    用高性能トレンチ®技術
  • 高速スイッチング速度
  • 100% UILテスト済み
  • 標準CDM ESD保護レベル >2.0 kV (注5)
  • RoHS準拠

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC30N20DZ

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Last Shipments

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

TSOT-23-6

Small Signal

Logic

0

Single

0

30

31

20

3

4.6

0.96

-

38

14

2.7

356

-

-

-

-

Price N/A

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Die Related Summary Data

Device: FDC30N20DZ

Equivalent to wafer fab process: RN

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN

9

11968865347

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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