30V NチャネルPowerTrench® MOSFET

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Overview

このNチャンネルMOSFETは、rDS(on)スイッチング性能に最適化されたフェアチャイルドセミコンダクター社の高度なPower Trench® プロセスを使用して生産されます。

  • ノートブックPC

  • 最大 rDS(on) = 23 mΩ @ VGS = 10 V、ID = 6.5 A
  • 最大 rDS(ON) = 36 mΩ @ VGS = 4.5 V、ID = 6.0 A
  • 超低rDS(on)用の高性能トレンチ技術。
  • 高速スイッチング速度。
  • RoHS対応

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製品:

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Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDC8886

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CAD Model

Pb

A

H

P

TSOT-23-6

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Single

0

30

23

20

3

6.5

1.6

-

36

-

2.5

348

-

-

-

-

$0.1517

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