Small Signal MOSFETs | FDD13AN06_F085

N チャネル PowerTrench® MOSFET、60V、50A、13.5mΩ

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Overview

N チャネル PowerTrench® MOSFET、60V、50A、13.5mΩ

  • インフォテインメント
  • ポータブルナビゲーション
  • インフォテインメント
  • その他
  • パワートレイン
  • 安全と管理
  • 快適性と利便性
  • ボディエレクトロニクス
  • 車両安全システム
  • その他のオートモーティブ

  • rDS(ON) = 11.5mΩ (通常)、VGS = 10V、ID = 50A
  • Qg(tot) = 22nC (通常)、VGS = 10V
  • 少量のミラー電荷
  • 低QRRボディーダイオード
  • UIS機能（単一パルスと反復パルス）
  • AEC Q101適合
  • RoHS に対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD13AN06A0-F085

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

DPAK

Small Signal

Standard

0

Single

0

60

13.5

±20

4

50

115

-

-

-

22

1350

6.4

15

260

90

$0.8316

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信頼性データ

Die Related Summary Data

Device: FDD13AN06A0-F085

Equivalent to wafer fab process: 2C

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

2C

0

3698398665

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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