Small Signal MOSFETs | FDD3860

N チャネル PowerTrench® MOSFET、100 V、29 A、36 mΩ

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Overview

独自の高密度トレンチ MOSFET 処理が使用されており、低い rDS(on) と低い Qg 性能指数向けに構成され、広範なスイッチング・アプリケーション向けのアバランシェ耐久性を示します。

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  • 最大 rDS(on) = 36mΩ @ VGS = 10V、ID = 5.9A
  • 超低rDS(on)
    用の高性能トレンチ技術。
  • UIL 100%テスト済み
  • RoHS対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD3860

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

No

N-Channel

PowerTrench® T1

DPAK

Small Signal

Standard

0

Single

0

100

36

±20

4.5

29

83

-

-

-

22

1310

6.3

40

100

45

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDD3860

Equivalent to wafer fab process: T2

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T2

0

1837855941

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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