Small Signal MOSFETs | FDD8453LZ

N チャネル Power Trench® MOSFET 40V、50A、6.7mΩ

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Overview

この N チャネル MOSFET は、オン抵抗とスイッチング損失を最小限に抑えるように特別に構成された高度な Power Trench® プロセスを使用して製造されます。ESD 電圧レベルを高めるために G-S ツェナーを追加しています。

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  • 最大 rDS(on) = 6.7mΩ @ VGS = 10V、ID = 15A
  • 最大 rDS(on) = 4.7mΩ @ VGS = 10V、ID = 15A
  • HBM ESD保護レベル >7kV通常(注4)
  • RoHS対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD8453LZ

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

Small Signal

Logic

0

Single

0

40

6.7

±20

3

50

65

-

8.7

-

24

2640

8

20

320

190

Price N/A

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Die Related Summary Data

Device: FDD8453LZ

Equivalent to wafer fab process: T5

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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