Small Signal MOSFETs | FDG315N

N チャネル・ロジックレベル PowerTrench® MOSFET 30 V、2 A、120 mΩ

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Overview

この N チャネル・ロジックレベル MOSFETは、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度な PowerTrench プロセスを使用して製造されています。これらのデバイスは、インライン型の低い電力損失と高速スイッチングが必要な低電圧およびバッテリー駆動アプリケーションに最適です。

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  • 2 A、 30 A V. RDS(on) = 0.12 Ω @ VGS = 10 V. RDS(on) = 0.16 Ω @ VGS = 4.5 V.
  • RDS(on) = 0.12 Ω @ VGS = 10 V
  • RDS(on) = 0.16 Ω @ VGS = 4.5 V
  • 少量のゲート電荷 (2.1nC 通常)。
  • 超低RDS(ON)用の高性能トレンチ技術。
  • コンパクトな業界標準 SC70-6表面実装パッケージ

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG315N

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CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Single

0

30

120

20

3

2

0.75

NA

-

4.5

2.1

NA

-

-

-

-

Price N/A

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Die Related Summary Data

Device: FDG315N

Equivalent to wafer fab process: TR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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