Small Signal MOSFETs | FDG332PZ

P チャネル PowerTrench® MOSFET -20V、-2.6A、97mΩ

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Overview

この P チャネル MOSFET は、高度な低電圧 PowerTrench® プロセスを使用しています。バッテリ電源管理アプリケーション向けに最適化されています。

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  • 最大 rDS(on) = 95mΩ @ VGS = -4.5V、ID = -2.6A
  • 最大 rDS(on) = 115mΩ @ VGS = -2.5V、ID = -2.2A
  • 最大 rDS(on) = 160mΩ @ VGS = -1.8V、ID = -1.9A
  • 最大 rDS(on) = 330mΩ @ VGS = -1.5V、ID = -1.0A
  • 非常に低いレベルのゲート ドライブ要件は、1.5V回路の操作を可能にします。
  • 非常に小さなパッケージアウトラインSC70-6
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG332PZ

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Obsolete

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CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-2.6

0.75

NA

115

1.8

7.6

NA

-

-

-

-

Price N/A

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Die Related Summary Data

Device: FDG332PZ

Equivalent to wafer fab process: TV

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TV

0

1399545734

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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