Small Signal MOSFETs | FDMD82100

デュアル N チャネル Power Trench® MOSFET 100V、25A、19mΩ

Obsolete

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Overview

このデバイスには、デュアル Power (3.3 mm X 5 mm MLP) パッケージに 2 つの 100V N チャネル MOSFET が含まれています。HS ソースと LS ドレインは、ハーフ/フルブリッジ、低ソースインダクタンスパッケージ、低 rDS(on)/ Qg FOM シリコン用に内部接続しています。

  • This product is general usage and suitable for many different applications.

  • 最大RDS(on)=19mΩ@VGS=10 V、 ID=7A
  • 最大RDS(on)=33mΩ@VGS=6V、ID=5.5A
  • ブリッジトポロジーの一次側の柔軟なレイアウトに最適
  • 端子は鉛フリーでRoHS対応です
  • UIL 100%テスト済み
  • ケルビンハイサイドMOSFET駆動ピン配列機能

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD82100

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Obsolete

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CAD Model

Pb

A

H

P

PQFN-12

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REEL

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N

N-Channel

PowerTrench® T1

PQFN-12

Small Signal

Standard

0

Dual

0

100

Q1=Q2=19

±20

4

25

2.1

-

-

-

8

805

2.7

48

176

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信頼性データ

Die Related Summary Data

Device: FDMD82100

Equivalent to wafer fab process: RN

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN

9

5181260142

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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