Small Signal MOSFETs | FDMD84100

デュアル N チャネル PowerTrench® MOSFET 100V、21A、20mΩ

Obsolete

Datasheet

購入

Overview

このパッケージはソース共通構成で内部で接続されている 2 つの N チャネルを統合します。これにより、非常に低いパッケージ寄生成分と、底面の共通ソースパッドへの最適化された熱経路が可能になります。とても小さいフットプリント (3.3 x 5 mm) で電力密度が向上します。

  • This product is general usage and suitable for many different applications.
  • 最大 rDS(on) = 20 mΩ @ VGS = 10 V、ID = 7 A
  • 最大 rDS(on) = 32 mΩ @ VGS = 6 V、ID = 5.5 A
  • 二次側同期整流の柔軟な設計に最適
  • 端子は鉛フリーでRoHS対応です。
  • 100%のUILがテスト済み

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD84100

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AU

1

260

REEL

3000

No

N-Channel

PowerTrench® T1

PQFN-8

Small Signal

Standard

0

Dual

0

100

Q1=Q2=20

±20

4

21

23

-

-

-

7.3

734

2.5

44

168

6.6

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDMD84100

Equivalent to wafer fab process: RH

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RH

0

863282377

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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