Small Signal MOSFETs | FDMD8560L

デュアル N チャネル PowerTrench® MOSFET 60V、22A、3.2mΩ

Obsolete

Datasheet

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Overview

このデバイスには、デュアル Power (5 mm X 6 mm MLP) パッケージに 2 つの 60V N チャネル MOSFET が含まれています。HS ソースと LS ドレインは、ハーフ/フルブリッジ、低ソース・インダクタンス・パッケージ、低 rDS(on)/Qg FOM シリコン用に内部接続しています。

  • This product is general usage and suitable for many different applications.

  • Q1: Nチャンネル
  • 最大 rDS(on) = 5.4 mΩ ＠ VGS = 4.5 V、ID = 18 A
    Q2: Nチャンネル
  • ブリッジ トポロジーの一次側の柔軟なレイアウトに最適
  • 100% UILテスト済み
  • ケルビンハイサイドMOSFET駆動ピン配置性能
  • RoHS準拠

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD8560L

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Obsolete

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Logic

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Dual

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Q1=Q2=3.2

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Q1=Q2= 22.0

48

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Q1=Q2=5.4

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Q1=Q2=7420

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信頼性データ

Die Related Summary Data

Device: FDMD8560L

Equivalent to wafer fab process: RM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RM

0

1284986536

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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