Small Signal MOSFETs | FDMD86100

デュアルNチャンネル シールドゲートPowerTrench® MOSFET

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Overview

このパッケージは、内部接続された2つのNチャンネルデバイスをコモンソース構成で統合し、シールドゲート技術を導入しています。 それにより、非常に低いパッケージ寄生要素と、下部の共通ソースパッドへの最適化されたサーマルパスを実現します。 高電力密度の超小型（5 x 6 mm）で提供。

  • This product is general usage and suitable for many different applications.

  • Common source configuration to eliminate PCB routing
  • Large source pad on bottom of package for enhanced thermals
  • シールドゲートMOSFET技術
  • 最大 rDS(on) = 10.5 mΩ @ VGS = 10 V、ID = 10 A
  • 最大 rDS(on) = 17.3 mΩ @ VGS = 6 V、ID = 7.8 A
  • 二次側同期整流の柔軟な設計に最適
  • 端子は鉛フリーで RoHS 対応です
  • UIL 100%テスト済み

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD86100

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Standard

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Die Related Summary Data

Device: FDMD86100

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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