Small Signal MOSFETs | FDMD8630

デュアルNチャネルPowerTrench® MOSFET 30 V、 167 A、1.0 mΩ

Obsolete

Datasheet

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Overview

この パッケージは ソース共通構成で 内部で 接続されている 2つのNチャネル を 統合します。これにより、 非常に低い パッケージ寄生成分と、 底面の 共通ソースパッドへの最適化された熱経路が可能になります。 への 最適化された 熱 経路 が 必要です 　 とても 小さいフットプリント (5 x 6 mm) で電力密度が上昇します。

  • Isolated DC-DC Synchronous Rectifier
  • Common Ground Load Switches

  • Common Source Configuration to Eliminate PCB Routing
  • Large Source Pad on Bottom of Package for Enhanced Thermals
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD8630

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Obsolete

CAD Model

Pb

A

H

P

PQFN-8

483AS

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

PQFN-8

Small Signal

Logic

0

Dual

0

30

Q1=Q2=1

3

3

167

43

-

Q1=Q2=1.3

8.8

46

7090

-

-

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDMD8630

Equivalent to wafer fab process: RN

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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