Small Signal MOSFETs | FDN304PZ

P チャネル 1.8V 仕様 PowerTrench® MOSFET -20V、-2.4A、52mΩ

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Overview

この P チャネル 1.8V 仕様 MOSFET は、低電圧 PowerTrench プロセスを使用しています。バッテリ電源管理アプリケーション向けに最適化されています。

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  • Battery Management
  • Load Switch
  • Battery Protection
  • -2.4A、-20V
  • RDS(ON) = 52 mΩ @ VGS = -4.5V
  • RDS(ON) = 70 mΩ @ VGS = -2.5V
  • RDS(ON) = 100 mΩ @ VGS = -1.8V
  • 高速スイッチング速度
  • ESD保護ダイオード
  • 超低RDS(ON)用高性能トレンチ技術。
  • SuperSOT™ -3は低RDS(ON)と、同じフットプリントのSOT23より30%高い電力処理能力を提供します。

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN304PZ

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-2.4

0.5

70

52

3.8

12

1310

-

-

-

-

$0.1831

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信頼性データ

Die Related Summary Data

Device: FDN304PZ

Equivalent to wafer fab process: TT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TT

6

3566152280

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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