Small Signal MOSFETs | FDN342P

P チャネル 2.5V 仕様 PowerTrench® MOSFET -20V、-2A、80mΩ

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この P チャネル 2.5V 仕様 MOSFET は、高度な PowerTrench プロセスの堅牢性に優れたゲート・バージョンで製造されています。広範なゲート駆動電圧 (2.5V ～ 12V) で電源管理アプリケーション向けに最適化されています。

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  • Load Switch
  • Battery Protection
  • Power Management
  • -2 A、-20 V、RDS(ON) = 0.08 Ω @ VGS = -4.5 V、 RDS(ON) = 0.13 Ω @ VGS = -2.5 V。
  • RDS(ON) = 0.08 Ω @ VGS = -4.5 V
  • RDS(ON) = 0.13 Ω @ VGS = -2.5 V.
  • バッテリーアプリケーション用の拡張されたVGSS範囲。
  • 超低RDS(ON)オンの高性能トレンチ技術。
  • 強化されたパワーSuperSOT™-3 (SOT-23)。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN342P

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

No

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-20

-

12

-1.5

-2

0.5

130

80

4.2

6.3

635

-

-

-

-

$0.1848

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信頼性データ

Die Related Summary Data

Device: FDN342P

Equivalent to wafer fab process: TR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TR

1

3586390609

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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