Small Signal MOSFETs | FDN5618P

60V Pチャネル PowerTrench® MOSFET -1.25A、170mΩ

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Overview

この60V PチャネルMOSFETは、高電圧PowerTrenchプロセスを使用しています。電源管理アプリケーション向けに最適化されています。

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  • -1.25 A、 -60 V. RDS(ON) = 0.200Ω @ VGS = –10 V、 RDS(ON) = 0.230Ω @ VGS = –4.5 V
  • RDS(ON) = 0.200Ω @ VGS = –10 V
  • RDS(ON) = 0.230Ω @ VGS = –4.5 V
  • 高速スイッチング速度超低RDS(ON)に対する高性能トレン
  • High Performance Trench Technology for Extremely Low rDS(on)

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN5618P

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-60

170

±20

-3

-1.25

0.5

-

230

-

8.6

430

1.3

-

52

19

$0.1253

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Die Related Summary Data

Device: FDN5618P

Equivalent to wafer fab process: TR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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