Small Signal MOSFETs | FDPF51N25RDTU

N チャンネル UniFETTM MOSFET 250 V、51 A、60 mΩ

Obsolete

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Overview

UniFETTM MOSFET は、プレーナストライプとDMOS技術に基づくフェアチャイルドセミコンダクターの高電圧MOSFETファミリーです。 このMOSFET技術はオン抵抗を低減し、優れたスイッチング性能と高い電子なだれエネルギー強度を提供するように設計されています。 このデバイスファミリーは、力率改善 (PFC)、フラットパネルディスプレイ (FPD) TV電源、ATX、電気ランプブラストに適しています。

  • PDP TV
  • Lighting
  • Uninterruptible Power Supplies
  • AC-DC Power Supplies

  • RDS(on)=48mΩ(通常) @VGS=10V、ID=25.5A
  • 少量のゲート電荷 (通常 55nC）
  • 低Crss (通常 63pF

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDPF51N25RDTU

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

340BL

NA

0

TUBE

800

N

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

250

0.06

5

5

51

38

-

-

-

55

2620

27

4000

530

63

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDPF51N25RDTU

Equivalent to wafer fab process: 3C

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

3C

0

1676189102

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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