Small Signal MOSFETs | FDS4897AC

デュアルN & PチャネルPowerTrench® MOSFET 40V

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Datasheet

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Overview

これらデュアルN&PチャネルMOSFETは、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrench®プロセスを使用して製造されます。

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  • Inverter
  • Power Supplies

  • Q1: Nチャンネル
  • 最大RDS(on) = 26 mΩ @ VGS = 10 V、ID = 6.1 A
  • 最大RDS(on) = 31 mΩ @ VGS = 4.5 V、ID = 5.6 AQ2: Pチャンネル
  • 最大 RDS(on) = 39 mΩ @ VGS = -10 V、ID = -5.2 A

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS4897AC

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±40

N:26.0,P:39.0

±20

±3

N: 6.1, P: -5.2

2

-

N:31.0,P:65.0

15

15

N: 796, P: 765

N: 2.9, P: 3.2

N: 7, P: 12

N: 95, P: 135

N: 65, P: 80

Price N/A

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Die Related Summary Data

Device: FDS4897AC

Equivalent to wafer fab process: R2,RF

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

R2,RF

0

374463285

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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