Small Signal MOSFETs | FDS6298

30V N チャネル高速スイッチング PowerTrench® MOSFET

Obsolete

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Overview

この N チャネル MOSFET は、同期または従来のスイッチング PWM コントローラを使用して、DC/DC コンバータの全体的な効率を改善するために特別に設計されています。低ゲート電荷、低 RDS(ON) 、高速スイッチング速度向けに最適化されています。

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  • 13 A、30 V RDS(ON) = 9mΩ @ VGS = 10 V
  • RDS(ON)= 12mΩ @ VGS = 4.5 V
  • 少量のゲート電荷(10nC @ VGS = 5 V)
  • 非常に小さいミラー電荷(3nC)
  • 小さいRg (1 Ohm)
  • RoHS対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6298

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Obsolete

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CAD Model

Pb

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信頼性データ

Die Related Summary Data

Device: FDS6298

Equivalent to wafer fab process: T3

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T3

0

442385824

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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