Small Signal MOSFETs | FDS6679AZ

PチャネルPowerTrench® MOSFET、-30V、-13A、9mΩ

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Overview

このPチャネルMOSFETは、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrenchプロセスを使用して製造されています。このデバイスは、ノートPCやポータブルバッテリーパックで一般的な電源管理およびロードスイッチアプリケーションに最適です。

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  • 最大 rDS(on) = 9.3mΩ@ VGS = -10V、ID = -13A
  • 最大 rDS(on) = 14.8mΩ @ VGS = -4.5V、ID = -11A
  • バッテリ用の拡張VGS範囲 (-25V)
  • HBM ESD保護レベル of 6kV 通常(注 3)
  • 超低rDS(ON)用の高性能トレンチ技術
  • 高い電力および電流処理能力
  • 高い電力および電流処理能力

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6679AZ

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Active

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-30

9.3

25

-3

-13

2.5

-

14.8

12

38

2890

-

-

-

-

$0.376

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Die Related Summary Data

Device: FDS6679AZ

Equivalent to wafer fab process: TV

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TV

0

1399545734

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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