Small Signal MOSFETs | FDS8690

N チャネル Power Trench® MOSFET 30V、14A、7.6mΩ

Obsolete

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Overview

この N チャネル MOSFET は、同期または従来のスイッチング PWM コントローラを使用して、DC/DC コンバータの全体的な効率を改善するために特別に設計されています。低ゲート電荷、低 rDS(on)、高速スイッチング速度向けに最適化されています。

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  • Notebook CPU Power Supply
  • Synchronous Rectifier

  • 最大 rDS(on) = 7.6mΩ、VGS = 10V、ID = 14A
  • 最大rDS(on) = 11.4mΩ、VGS = 4.5V、ID = 11.5A
  • 非常に小さいrDS(on)および高速スイッチング用の高性能トレンチ
  • 少量のゲート電荷
  • 高い電力および電流処理能力
  • 100% RG テスト済み
  • RoHS対応

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8690

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

30

7.6

20

3

14

2.5

-

11.4

17

10

1260

-

-

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDS8690

Equivalent to wafer fab process: RH

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

RH

0

779824089

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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