Small Signal MOSFETs | FDS8882

N チャネル PowerTrench® MOSFET 30V、9A、20.0mΩ

Obsolete

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Overview

FDS8882 は電力変換アプリケーションでの損失を最小限に抑えるように設計されています。シリコン技術およびパッケージ技術の両方の進歩が組み合わされ、最低の rDS(on) を実現しながら、卓越したスイッチング性能を維持します。

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  • Notebook System Regulators
  • DC/DC Converters

  • 最大 rDS(on) = 20.0 mΩ @ VGS = 10 V、ID = 9 A
  • 最大 rDS(on) = 22.5 mΩ @ VGS = 4.5 V、ID = 8 A
  • 超低RDS(on)および高速スイッチング用の高性能トレンチ技術
  • 高い電力および電流処理能力
  • 端子は鉛フリーでRoHS対応です。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8882

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Obsolete

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CAD Model

Pb

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REEL

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N

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PowerTrench® T1

SOIC-8

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Logic

0

Single

0

30

20

20

3

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22.5

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707

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Price N/A

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信頼性データ

Die Related Summary Data

Device: FDS8882

Equivalent to wafer fab process: T5

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T5

0

1599906359

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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