Small Signal MOSFETs | FDS8935

デュアル P チャネル PowerTrench® MOSFET -80V、-2.1A、183mΩ

Obsolete

Datasheet

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Overview

この P チャネル MOSFET は、rDS(on)、スイッチング性能、堅牢性のために最適化された高度な PowerTrench® プロセスを使用して製造されています。

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  • Load Switch
  • Synchronous Rectifier
  • 最大 rDS(on) = 183 mO @ VGS = -10 V、ID = -2.1 A
  • 最大 rDS(on) = 247 mO @ VGS = -4.5 V、ID = -1.9 A
  • 超低rDS(on)用の高性能トレンチ技術
  • 広く使われている表面実装パッケージ中の高電力および電流の処理機能
  • 100%のUILがテスト済み
  • RoHS対応

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8935

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Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

No

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

-80

Q1=Q2=183

±20

-3

-2.1

3.1

-

Q1=Q2=273.0

-

7

661

2.6

34

47

24

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDS8935

Equivalent to wafer fab process: TR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TR

1

3586390609

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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