Small Signal MOSFETs | FDT1600N10ALZ

N チャネル PowerTrench® MOSFET 100V、5.6A、160mΩ

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Overview

この N チャネル MOSFET は、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように構成された高度な PowerTrench® プロセスを使用して製造されています。

  • LED TV
  • 家電製品
  • Synchronous Rectification
  • Uninterruptible Power Supplies
  • Micro Solar Inverters

  • RDS(on) = 121 mΩ (通常)@ VGS = 10 V、 ID = 2.8 A
  • RDS(on) = 156 mΩ (通常)@ VGS = 5 V、 ID = 1.8 A
  • 高速スイッチング速度
  • 少量のゲート電荷 (通常.2.9nC)
  • 超低RDS(on)用の高性能トレンチ技術
  • 高電力および電流処理能力
  • RoHS対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT1600N10ALZ

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

Y

N-Channel

PowerTrench® T1

SC-4

Small Signal

Standard

0

Single

0

100

160

±20

2.8

5.6

10.42

-

-

-

2.9

169

0.64

32.7

43

2.04

$0.2307

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Die Related Summary Data

Device: FDT1600N10ALZ

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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