Small Signal MOSFETs | FDT434P

Pチャネル2.5V 仕様 PowerTrench® MOSFET -20V、-5.5A、50mΩ

Obsolete

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Overview

このPチャネル2.5V仕様MOSFETは、優れたスイッチング性能のために低デート電荷を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度なPowerTrenchプロセスを使用して製造されます。

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  • Low Dropout Regulator
  • DC/DC Converters
  • Load Switch
  • Motor Drives
  • -5.5A、-20V。RDS(on)=0.050Ω@VGS=-4.5V、RDS(on)=0.070 Ω @VGS=-2.5V
  • 少量のゲート電荷（通常13nC）
  • 特に低いRDS(ON)に対する高性能トレンチ技術。
  • 幅広く使用できる表面実装パッケージの高電力および電流処理機能

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT434P

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Obsolete

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

No

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Single

0

-20

-

8

-1

-5.5

3

NA

70

4.2

13

NA

-

-

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: FDT434P

Equivalent to wafer fab process: TR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TR

1

3586390609

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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