Small Signal MOSFETs | FDT86246

N チャネル Power Trench® MOSFET 150V、2A、236mΩ

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Overview

この N チャネル MOSFET は、rDS(on) 、スイッチング性能、堅牢性のために最適化された高度な PowerTrench® プロセスを使用して製造されています。

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  • Load Switch
  • Primary Switch

  • 最大 rDS(on) = 236 mΩ @ VGS = 10 V、ID = 2 A
  • 最大 rDS(on) = 329 mΩ @ VGS = 6 V、ID = 1.7 A
  • 超低rDS(on)用の高性能トレンチ技術
  • 広く使われている表面実装パッケージ中の高電力および電流の処理機能
  • 高速スイッチング速度
  • 100%のUILがテスト済み
  • RoHS対応

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT86246

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

Y

N-Channel

PowerTrench® T1

SC-4

Small Signal

Standard

0

Single

0

150

236

±20

4

2

2.2

-

-

-

1.7

161

0.8

31

21

1.6

$0.415

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信頼性データ

Die Related Summary Data

Device: FDT86246

Equivalent to wafer fab process: T7

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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