コンプリメンタリー N & Pチャネル PowerTrench® MOSFET 20V

Last Shipments

Overview

このコンプリメンタリーN&PチャネルMOSFETは、VGS = 2.5VでRDS(ON)を最適化し、VGS=1.8VでRDS(ON)を、高度なPower Trench プロセスを使用して設計されています。

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  • Level Shifting
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

  • Q1: Nチャンネル
  • 最大RDS(on)=0.7mΩ@VGS=4.5V、ID=600mA
  • ESD保護ダイオード
  • RoHS対応

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製品:

1

共有

Product Groups:

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDY4000CZ

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Last Shipments

CAD Model

Pb

A

H

P

SOT-563

1

260

REEL

3000

N

Complementary

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

±20

-

8

±1.5

N: 0.6, P: -0.35

0.625

N: 850, P: 1600

N: 7000, P: 1200

-

1

100

-

-

-

-

Price N/A

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