NチャネルA-FET 200V、1.13A、800mΩ

Obsolete

Overview

  • 電子なだれ耐性技術
  • 堅牢性に優れたゲート酸化物技術 ν 低入力容量
  • ゲート電荷を向上
  • 広い安全動作領域
  • 低リーク電流: 10 µA (最大) @ VDS = 200V
  • 低RDS(ON) : 0.609 Ω (通常)

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製品:

1

共有

Product Groups:

Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

IRLM120ATF

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Obsolete

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

250

REEL

4000

N

N-Channel

PowerTrench® T1

SOT-223-4

Small Signal

Logic

0

Single

0

200

-

±20

20

1.13

2.7

NA

-

10.2

-

NA

6

340

90

39

Price N/A

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