Small Signal MOSFETs | NDS9407

60V PチャネルPowerTrench® MOSFET-3.0A、150mΩ

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Overview

このPチャネルMOSFETは、フェアチャイルド・セミコンダクターの高度なPowerTrenchプロセスの堅牢性に優れたゲートバージョンです。広範なゲート駆動電圧定格（4.5V〜20V）を必要とする電源管理アプリケーション向けに最適化されています。

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  • Power Management
  • Load Switch
  • Battery Protection

  • -3.0A、-60V
  • RDS(ON) = 150 mΩ @ VGS = -10V
  • RDS(ON) = 240 mΩ @ VGS = -4.5V
  • 少量のゲート電荷
  • 高速スイッチング速度
  • 超低RDS(ON)用高性能トレンチ技術。
  • 高い電力および電流処理能力

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDS9407

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

NA

0

-60

150

±20

-3

-3

50

-

240

-

16

732

3.3

-

86

38

$0.2573

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信頼性データ

Die Related Summary Data

Device: NDS9407

Equivalent to wafer fab process: TR

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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