Small Signal MOSFETs | NVMD6N04

デュアル N チャネル・パワー MOSFET 40V、5.8A、34mΩ

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Overview

車載用パワー MOSFET。NTMD6N04R2G 40V、6.0A、デュアル N チャネル SOIC-8。AEC-Q101 基準を満たす MOSFET で、PPAP に対応しており、車載アプリケーションに適しています。

  • DC-DC Converter
  • Buck-Boost Circuit
  • Computers
  • Printers
  • Cellular and Cordless Phones
  • Disk Drives and Tape Drives
  • Designed for use in Low Voltage High Speed switching applications.
  • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life
  • Miniature SOIC−8 Surface Mount Package Saves Board Space
  • Diode is Characterized for Use in Bridge Circuits
  • Diode Exhibits High Speed, with Soft Recovery
  • AEC−Q101 Qualified and PPAP Capable
  • RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVMD6N04R2G

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Die Related Summary Data

Device: NVMD6N04R2G

Equivalent to wafer fab process: HD3e

製品技術

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等価デバイス時間

MTBF/MTTF (時間)

FITS

HD3e

0

10462405809

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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